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FET Family: JFET vs MOSFET Basics

By Dhruvjit February 7, 2026 Posted in Electronic Components

Start with the core idea

A FET (Field-Effect Transistor) is a transistor where voltage at one terminal controls current through a channel. In simple terms, it is an electronically controlled valve.

The two families people usually meet first are JFET and MOSFET. Both are voltage-controlled and both can have very high input impedance, but they do not behave the same way at startup, biasing, or power switching.

If you remember one rule early, remember this:

That single difference already explains why MOSFETs dominate digital and power switching, while JFETs still appear in some analog paths.

What a JFET is

A JFET is usually a depletion-mode device. That means with gate-source voltage near zero, current can already flow from drain to source. You control current by reverse-biasing the gate and narrowing the channel.

In practical terms:

Why people still use JFETs:

What confuses people:

  1. They expect JFET to behave like a logic switch (hard OFF at 0V gate), which is usually not true.
  2. They mix MOSFET gate-drive assumptions into JFET designs.
  3. They ignore device-to-device variation in analog operating points.

So for JFET work, biasing matters more than “just turning on and off.”

A common first-order JFET model (for many analog use cases) is:

ID=IDSS(1VGSVP)2I_D = I_{DSS}\left(1 - \frac{V_{GS}}{V_P}\right)^2

Where:

This equation is useful because it shows the core JFET behavior clearly: as gate bias moves toward pinch-off, current falls nonlinearly.

What a MOSFET is

A MOSFET is the FET you will use most often for switching loads. For common enhancement-mode MOSFETs, no channel exists at zero gate-source voltage, so the device stays OFF until gate voltage rises above the required level.

In practical terms:

An important warning: threshold voltage is not the same as fully ON voltage.

Many people read Vgs(th) and assume the MOSFET is fully usable at that voltage. In reality, Vgs(th) only indicates where conduction begins. For low heat and low loss, you usually need enough gate drive to reach low Rds(on) in the datasheet conditions.

For power switching, always check:

For MOSFETs, these two equations are the most useful starting point:

Linear (ohmic) region:

ID=kn[(VGSVTH)VDSVDS22]I_D = k_n\left[(V_{GS}-V_{TH})V_{DS} - \frac{V_{DS}^2}{2}\right]

Saturation region (idealized):

ID=12kn(VGSVTH)2I_D = \frac{1}{2}k_n(V_{GS}-V_{TH})^2

Where:

For switching designs, a practical power estimate you will use often is:

PcondID2RDS(on)P_{cond} \approx I_D^2 \cdot R_{DS(on)}

This is why datasheet RDS(on)R_{DS(on)} at your real gate drive voltage matters so much.

JFET vs MOSFET, plus practical use-cases

Now the useful comparison for real design decisions:

A quick practical decision path:

  1. If your main goal is efficient switching of motors, LEDs, heaters, or converter stages, start with MOSFET.
  2. If your goal is a specific analog behavior with very high input impedance and smooth bias control, JFET may be a good fit.
  3. If you are unsure, prototype both at small scale and compare measurable outcomes: noise, heat, efficiency, and control simplicity.

Real use-cases:

Common mistakes to avoid in both:

If this topic is clear, you should be able to look at a requirement and quickly answer: “Is this mostly an analog-bias problem or a power-switching problem?” That answer usually tells you whether to begin with JFET or MOSFET.


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